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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2688
DESCRIPTION With TO-126 package High breakdown voltage High transition frequency APPLICATIONS Designed for use in Color TV chroma output circuits.
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC

PARAMETER
CHA IN
Collector current
Collector-base voltage
Collector-emitter voltage
E SEM NG
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 300 300 5 0.2
UNIT V V V A
Open base Open collector
Emitter-base voltage
Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
1.25 W 10 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC2688
SYMBOL
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=50mA; IB=5mA
1.5
V
V(BR)CEO ICBO
Collector-emitter breakdown voltage
IC=1mA; IB=0 VCB=200V; IE=0
300
V
Collector cut-off current
0.1
|I
A
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
|I
A
hFE
DC current gain
IC=10mA ; VCE=10V
40
250
fT
Transition frequency
IC=10mA ; VCE=30V
40
MHz
Cre
Feedback capacitance
IE=0 ; VCB=10V;f=1MHz
hFE Classifications N
M

L 100-200
40-80
CHA IN
60-120
E SEM NG
K 160-250
OND IC
TOR UC
3.0
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2688

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3

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